SSG4920N 6.9 a, 30 v, r ds(on) 34 m ? dual n-channel mode power mosfet elektronische bauelemente 22-nov-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfet s utilize high cell density process low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power manag ement circuitry. typical applications are pwmdc-dc converters, power management in portable and battery- powered products such as comput ers, printers, battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature sop-8 surface mount package saves board space. ? high power and current handling capability. ? low side high current dc-dc converter applications. product summary SSG4920N v ds (v) r ds (on) m( ? ? i d (a) 30 34@v gs =10v 6.9 41@v gs =4.5v 6.0 package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 i d @ t a = 25c 6.9 a i d @ t a = 70c 5.6 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 1.7 a total power dissipation 1 p d @ t a = 25c 2.1 w p d @ t a = 70c 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient (max.) 1 t Q 10 sec r ja 62.5 c / w steady state 110 c / w notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. sop-8 ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. d d s s g g d d
SSG4920N 6.9 a, 30 v, r ds(on) 34 m ? dual n-channel mode power mosfet elektronische bauelemente 22-nov-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate threshold voltage v gs(th) 1 - - v v ds = v gs , i d = 250 a gate-body leakage current i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds = 24v, v gs = 0v - - 10 a v ds = 24v, v gs = 0v, t j = 55c on-state drain current 1 i d(on) 20 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 34 m ? v gs = 10v, i d = 6.9a - - 41 v gs = 4.5v, i d = 6.0a forward transconductance 1 g fs - 25 - s v ds = 15v, i d = 6.9a diode forward voltage v sd - 0.77 - v i s = 1.7a, v gs = 0v dynamic 2 total gate charge q g - 4.0 - nc i d = 6.9a v ds = 15v v gs = 4.5v gate-source charge q gs - 1.1 - gate-drain charge q gd - 1.4 - turn-on delay time t d(on) - 12 - ns v dd = 15v i d = 1a v gen = 10v r l = 15 ? rise time t r - 10 - turn-off delay time t d(off) - 60 - fall time t f - 15 - source-ddrain reverse recovery time t rr - 50 - i f =1.7a, di / dt = 100a/ s notes 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
SSG4920N 6.9 a, 30 v, r ds(on) 34 m ? dual n-channel mode power mosfet elektronische bauelemente 22-nov-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. typical electrical characteristics
SSG4920N 6.9 a, 30 v, r ds(on) 34 m ? dual n-channel mode power mosfet elektronische bauelemente 22-nov-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. typical electrical characteristics
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